IPB073N15N5ATMA1

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Overview of IPB073N15N5ATMA1

Part NumberIPB073N15N5ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 150V 114A TO263-3
DatasheetsDownload IPB073N15N5ATMA1 Datasheet PDFPDF Icon
Price for IPB073N15N5ATMA1

Specification of IPB073N15N5ATMA1

Status
Active
Series
OptiMOS™-5
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25C
114A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Rds On (Max) @ Id, Vgs
7.3mOhm @ 57A, 10V
Vgs(th) (Max) @ Id
4.6V @ 160A
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4700 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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