IPB100N12S305ATMA1

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Overview of IPB100N12S305ATMA1

Part NumberIPB100N12S305ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 120V 100A TO263-3
DatasheetsDownload IPB100N12S305ATMA1 Datasheet PDFPDF Icon
Price for IPB100N12S305ATMA1

Specification of IPB100N12S305ATMA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 240A
Gate Charge (Qg) (Max) @ Vgs
185 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
11570 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-1
Package / Case
TO-263-4, DPak (3 Leads + Tab), TO-263AA

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