IPB180N04S4H0ATMA1

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Overview of IPB180N04S4H0ATMA1

Part NumberIPB180N04S4H0ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 40V 180A TO263-7-3
DatasheetsDownload IPB180N04S4H0ATMA1 Datasheet PDFPDF Icon
Price for IPB180N04S4H0ATMA1

Specification of IPB180N04S4H0ATMA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 180A
Gate Charge (Qg) (Max) @ Vgs
225 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
17940 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-3
Package / Case
TO-263-7, DPak (6 Leads + Tab)

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