IPB47N10SL-26

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Overview of IPB47N10SL-26

Part NumberIPB47N10SL-26
ManufacturerInfineon Technologies
DescriptionIPB47N10 - 75V-100V N-CHANNEL AU
DatasheetsDownload IPB47N10SL-26 Datasheet PDFPDF Icon
Price for IPB47N10SL-26

Specification of IPB47N10SL-26

Status
Active
Series
SIPMOS®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
26mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
135 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
175W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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