IPB60R080P7ATMA1

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Overview of IPB60R080P7ATMA1

Part NumberIPB60R080P7ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 600V 37A D2PAK
DatasheetsDownload IPB60R080P7ATMA1 Datasheet PDFPDF Icon
Price for IPB60R080P7ATMA1

Specification of IPB60R080P7ATMA1

Status
Active
Series
CoolMOS™ P7
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Supplier
Infineon Technologies,Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id
4V @ 590A
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2180 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
129W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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