IPB70N12S3L12ATMA1

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Overview of IPB70N12S3L12ATMA1

Part NumberIPB70N12S3L12ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CHANNEL_100+
DatasheetsDownload IPB70N12S3L12ATMA1 Datasheet PDFPDF Icon
Price for IPB70N12S3L12ATMA1

Specification of IPB70N12S3L12ATMA1

Status
Obsolete
Series
Automotive, AEC-Q101, OptiMOS™
Package
Tape & Reel (TR),Bulk
Supplier
Infineon Technologies,Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25C
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12.1mOhm @ 70A, 10V
Vgs(th) (Max) @ Id
2.4V @ 83A
Gate Charge (Qg) (Max) @ Vgs
77 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
5550 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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