IPBE65R115CFD7AATMA1

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Overview of IPBE65R115CFD7AATMA1

Part NumberIPBE65R115CFD7AATMA1
ManufacturerInfineon Technologies
DescriptionAUTOMOTIVE_COOLMOS PG-TO263-7
DatasheetsDownload IPBE65R115CFD7AATMA1 Datasheet PDFPDF Icon
Price for IPBE65R115CFD7AATMA1

Specification of IPBE65R115CFD7AATMA1

Status
Active
Series
CoolMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
115mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id
4.5V @ 490A
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1950 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-11
Package / Case
TO-263-8, DPak (7 Leads + Tab), TO-263CA

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