IPC218N04N3X7SA1

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Overview of IPC218N04N3X7SA1

Part NumberIPC218N04N3X7SA1
ManufacturerInfineon Technologies
DescriptionMV POWER MOS
DatasheetsDownload IPC218N04N3X7SA1 Datasheet PDFPDF Icon
Price for IPC218N04N3X7SA1

Specification of IPC218N04N3X7SA1

Status
Not For New Designs
Series
OptiMOS™ 3
Package
Bulk
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 200A
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die

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