IPD135N03LGBTMA1

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Overview of IPD135N03LGBTMA1

Part NumberIPD135N03LGBTMA1
ManufacturerInfineon Technologies
DescriptionLV POWER MOS
DatasheetsDownload IPD135N03LGBTMA1 Datasheet PDFPDF Icon
Price for IPD135N03LGBTMA1

Specification of IPD135N03LGBTMA1

Status
Not For New Designs
Series
OptiMOS™ 3
Package
Tape & Reel (TR)
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
31W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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