IPD50R800CEAUMA1

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Overview of IPD50R800CEAUMA1

Part NumberIPD50R800CEAUMA1
ManufacturerInfineon Technologies
DescriptionCONSUMER
DatasheetsDownload IPD50R800CEAUMA1 Datasheet PDFPDF Icon
Price for IPD50R800CEAUMA1

Specification of IPD50R800CEAUMA1

Status
Active
Series
CoolMOS™ CE
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
800mOhm @ 1.5A, 13V
Vgs(th) (Max) @ Id
3.5V @ 130A
Gate Charge (Qg) (Max) @ Vgs
12.4 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-2
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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