IPD650P06NMSAUMA1

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Overview of IPD650P06NMSAUMA1

Part NumberIPD650P06NMSAUMA1
ManufacturerInfineon Technologies
DescriptionMOSFET P-CH 60V 22A TO252-3
DatasheetsDownload IPD650P06NMSAUMA1 Datasheet PDFPDF Icon
Price for IPD650P06NMSAUMA1

Specification of IPD650P06NMSAUMA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR)
Supplier
Infineon Technologies
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
65mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
4V @ 1.04mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-313
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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