IPD70N03S4L04ATMA1

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Overview of IPD70N03S4L04ATMA1

Part NumberIPD70N03S4L04ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 30V 70A TO252-3
DatasheetsDownload IPD70N03S4L04ATMA1 Datasheet PDFPDF Icon
Price for IPD70N03S4L04ATMA1

Specification of IPD70N03S4L04ATMA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 70A, 10V
Vgs(th) (Max) @ Id
2.2V @ 30A
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
16V
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
68W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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