IPG20N04S412ATMA1

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Overview of IPG20N04S412ATMA1

Part NumberIPG20N04S412ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET 2N-CH 40V 20A 8TDSON
DatasheetsDownload IPG20N04S412ATMA1 Datasheet PDFPDF Icon
Price for IPG20N04S412ATMA1

Specification of IPG20N04S412ATMA1

Status
Active
Series
Automotive, AEC-Q101, OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Supplier
Infineon Technologies,Rochester Electronics, LLC
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25C
20A
Rds On (Max) @ Id, Vgs
12.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 15A
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1470pF @ 25V
Power - Max
41W
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PG-TDSON-8-4

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