IPG20N06S4L26ATMA1

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Overview of IPG20N06S4L26ATMA1

Part NumberIPG20N06S4L26ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET 2N-CH 60V 20A TDSON-8
DatasheetsDownload IPG20N06S4L26ATMA1 Datasheet PDFPDF Icon
Price for IPG20N06S4L26ATMA1

Specification of IPG20N06S4L26ATMA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25C
20A
Rds On (Max) @ Id, Vgs
26mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
2.2V @ 10A
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1430pF @ 25V
Power - Max
33W
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PG-TDSON-8-4

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