IPI100P03P3L-04

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Overview of IPI100P03P3L-04

Part NumberIPI100P03P3L-04
ManufacturerInfineon Technologies
DescriptionMOSFET P-CH 30V 100A TO262-3
DatasheetsDownload IPI100P03P3L-04 Datasheet PDFPDF Icon
Price for IPI100P03P3L-04

Specification of IPI100P03P3L-04

Status
Obsolete
Series
OptiMOS™
Package
Tube
Supplier
Infineon Technologies
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2.1V @ 475A
Gate Charge (Qg) (Max) @ Vgs
200 nC @ 10 V
Vgs (Max)
+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds
9300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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