IPI60R165CPAKSA1

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Overview of IPI60R165CPAKSA1

Part NumberIPI60R165CPAKSA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 650V 21A TO262-3
DatasheetsDownload IPI60R165CPAKSA1 Datasheet PDFPDF Icon
Price for IPI60R165CPAKSA1

Specification of IPI60R165CPAKSA1

Status
Not For New Designs
Series
CoolMOS™
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
3.5V @ 790A
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
192W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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