IPL60R180P6AUMA1

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Overview of IPL60R180P6AUMA1

Part NumberIPL60R180P6AUMA1
ManufacturerInfineon Technologies
DescriptionHIGH POWER_LEGACY
DatasheetsDownload IPL60R180P6AUMA1 Datasheet PDFPDF Icon
Price for IPL60R180P6AUMA1

Specification of IPL60R180P6AUMA1

Status
Active
Series
CoolMOS™ P6
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4.5V @ 750A
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2080 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
176W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-VSON-4
Package / Case
4-PowerTSFN

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