IPL65R1K5C6SATMA1

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Overview of IPL65R1K5C6SATMA1

Part NumberIPL65R1K5C6SATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 650V 3A THIN-PAK
DatasheetsDownload IPL65R1K5C6SATMA1 Datasheet PDFPDF Icon
Price for IPL65R1K5C6SATMA1

Specification of IPL65R1K5C6SATMA1

Status
Not For New Designs
Series
CoolMOS™ C6
Package
Tape & Reel (TR),Bulk
Supplier
Infineon Technologies,Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 100A
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
26.6W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TSON-8-2
Package / Case
8-PowerTDFN

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