IPLK60R1K0PFD7ATMA1

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Overview of IPLK60R1K0PFD7ATMA1

Part NumberIPLK60R1K0PFD7ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 600V 5.2A THIN-PAK
DatasheetsDownload IPLK60R1K0PFD7ATMA1 Datasheet PDFPDF Icon
Price for IPLK60R1K0PFD7ATMA1

Specification of IPLK60R1K0PFD7ATMA1

Status
Active
Series
CoolMOS™ PFD7
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50A
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
230 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
31.3W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-52
Package / Case
8-PowerTDFN

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