IPN50R1K4CEATMA1

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Overview of IPN50R1K4CEATMA1

Part NumberIPN50R1K4CEATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 500V 4.8A SOT223
DatasheetsDownload IPN50R1K4CEATMA1 Datasheet PDFPDF Icon
Price for IPN50R1K4CEATMA1

Specification of IPN50R1K4CEATMA1

Status
Active
Series
CoolMOS™ CE
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 900mA, 13V
Vgs(th) (Max) @ Id
3.5V @ 70A
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
178 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
5W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-3
Package / Case
TO-261-4, TO-261AA

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