IPP04CN10NGXKSA1

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Overview of IPP04CN10NGXKSA1

Part NumberIPP04CN10NGXKSA1
ManufacturerInfineon Technologies
DescriptionMV POWER MOS
DatasheetsDownload IPP04CN10NGXKSA1 Datasheet PDFPDF Icon
Price for IPP04CN10NGXKSA1

Specification of IPP04CN10NGXKSA1

Status
Not For New Designs
Series
OptiMOS™ 2
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
210 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
13800 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3

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