IPP06CN10LGXKSA1

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Overview of IPP06CN10LGXKSA1

Part NumberIPP06CN10LGXKSA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 100V 100A TO220-3
DatasheetsDownload IPP06CN10LGXKSA1 Datasheet PDFPDF Icon
Price for IPP06CN10LGXKSA1

Specification of IPP06CN10LGXKSA1

Status
Obsolete
Series
OptiMOS™
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.4V @ 180A
Gate Charge (Qg) (Max) @ Vgs
124 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
11900 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3

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