IPP114N03LGHKSA1

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Overview of IPP114N03LGHKSA1

Part NumberIPP114N03LGHKSA1
ManufacturerInfineon Technologies
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload IPP114N03LGHKSA1 Datasheet PDFPDF Icon
Price for IPP114N03LGHKSA1

Specification of IPP114N03LGHKSA1

Status
Active
Series
OptiMOS™ 3
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
11.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
38W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3

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