IPP50CN10NGHKSA1

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Overview of IPP50CN10NGHKSA1

Part NumberIPP50CN10NGHKSA1
ManufacturerInfineon Technologies
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload IPP50CN10NGHKSA1 Datasheet PDFPDF Icon
Price for IPP50CN10NGHKSA1

Specification of IPP50CN10NGHKSA1

Status
Active
Series
CoolMOS™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
50mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 20A
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1090 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
44W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3

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