IPS031N03LGAKMA1

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Overview of IPS031N03LGAKMA1

Part NumberIPS031N03LGAKMA1
ManufacturerInfineon Technologies
DescriptionLV POWER MOS
DatasheetsDownload IPS031N03LGAKMA1 Datasheet PDFPDF Icon
Price for IPS031N03LGAKMA1

Specification of IPS031N03LGAKMA1

Status
Obsolete
Series
OptiMOS™ 3
Package
Tube,Tube
Supplier
Rochester Electronics, LLC,Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
5300 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
94W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-11
Package / Case
TO-251-3 Stub Leads, IPak

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