IPS65R950C6

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Overview of IPS65R950C6

Part NumberIPS65R950C6
ManufacturerInfineon Technologies
DescriptionPOWER BIPOLAR TRANSISTOR
DatasheetsDownload IPS65R950C6 Datasheet PDFPDF Icon
Price for IPS65R950C6

Specification of IPS65R950C6

Status
Active
Series
CoolMOS C6™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 200A
Gate Charge (Qg) (Max) @ Vgs
15.3 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
328 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
37W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251
Package / Case
TO-251-3 Stub Leads, IPak

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