IPSA70R950CEAKMA1

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Overview of IPSA70R950CEAKMA1

Part NumberIPSA70R950CEAKMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 700V 8.7A TO251-3
DatasheetsDownload IPSA70R950CEAKMA1 Datasheet PDFPDF Icon
Price for IPSA70R950CEAKMA1

Specification of IPSA70R950CEAKMA1

Status
Discontinued at Digi-Key
Package
Bulk,Tube
Supplier
Rochester Electronics, LLC,Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
700 V
Current - Continuous Drain (Id) @ 25C
8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 150A
Gate Charge (Qg) (Max) @ Vgs
15.3 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
328 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
94W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-347
Package / Case
TO-251-3 Stub Leads, IPak

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