IPT022N10NF2SATMA1

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Overview of IPT022N10NF2SATMA1

Part NumberIPT022N10NF2SATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET
DatasheetsDownload IPT022N10NF2SATMA1 Datasheet PDFPDF Icon
Price for IPT022N10NF2SATMA1

Specification of IPT022N10NF2SATMA1

Status
Active
Series
StrongIRFET™ 2
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
29A (Ta), 236A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.25mOhm @ 150A, 10V
Vgs(th) (Max) @ Id
3.8V @ 169A
Gate Charge (Qg) (Max) @ Vgs
155 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
7300 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 250W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8
Package / Case
8-PowerSFN

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