IPU60R600C6BKMA1

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Overview of IPU60R600C6BKMA1

Part NumberIPU60R600C6BKMA1
ManufacturerInternational Rectifier
Description600V CoolMOS C6 Power Transistor
DatasheetsDownload IPU60R600C6BKMA1 Datasheet PDFPDF Icon
Price for IPU60R600C6BKMA1

Specification of IPU60R600C6BKMA1

Status
Obsolete
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 200A
Gate Charge (Qg) (Max) @ Vgs
20.5 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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