IPW50R190CE

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Overview of IPW50R190CE

Part NumberIPW50R190CE
ManufacturerInfineon Technologies
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload IPW50R190CE Datasheet PDFPDF Icon
Price for IPW50R190CE

Specification of IPW50R190CE

Status
Active
Series
CoolMOS™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
24.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
190mOhm @ 6.2A, 13V
Vgs(th) (Max) @ Id
3.5V @ 510A
Gate Charge (Qg) (Max) @ Vgs
47.2 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1137 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
152W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
TO-247-3

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