IPW60R099CPFKSA1

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Overview of IPW60R099CPFKSA1

Part NumberIPW60R099CPFKSA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 650V 31A TO247-3
DatasheetsDownload IPW60R099CPFKSA1 Datasheet PDFPDF Icon
Price for IPW60R099CPFKSA1

Specification of IPW60R099CPFKSA1

Status
Not For New Designs
Series
CoolMOS™
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
99mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2800 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
255W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-1
Package / Case
TO-247-3

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