IPW65R095C7

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Overview of IPW65R095C7

Part NumberIPW65R095C7
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 650V 24A TO247
Price for IPW65R095C7

Specification of IPW65R095C7

Status
Active
Series
CoolMOS™ C7
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id
4V @ 590A
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2140 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
128W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247
Package / Case
TO-247-3

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