IPW65R280E6

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Overview of IPW65R280E6

Part NumberIPW65R280E6
ManufacturerInfineon Technologies
Description650 V COOLMOS E6 POWER MOSFET
DatasheetsDownload IPW65R280E6 Datasheet PDFPDF Icon
Price for IPW65R280E6

Specification of IPW65R280E6

Status
Active
Series
CoolMOS™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 440A
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
950 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
TO-247-3

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