IQE050N08NM5CGSCATMA1

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Overview of IQE050N08NM5CGSCATMA1

Part NumberIQE050N08NM5CGSCATMA1
ManufacturerInfineon Technologies
DescriptionOPTIMOS LOWVOLTAGE POWER MOSFET
DatasheetsDownload IQE050N08NM5CGSCATMA1 Datasheet PDFPDF Icon
Price for IQE050N08NM5CGSCATMA1

Specification of IQE050N08NM5CGSCATMA1

Status
Active
Series
OptiMOS™ 5
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25C
16A (Ta), 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.8V @ 49A
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 100W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-WHTFN-9-1
Package / Case
9-PowerWDFN

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