IRC840PBF

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of IRC840PBF

Part NumberIRC840PBF
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 500V 8A TO220-5
DatasheetsDownload IRC840PBF Datasheet PDFPDF Icon
Price for IRC840PBF

Specification of IRC840PBF

Status
Obsolete
Series
HEXFET®
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
Current Sensing
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-5
Package / Case
TO-220-5

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