IRD3CH31DB6

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Overview of IRD3CH31DB6

Part NumberIRD3CH31DB6
ManufacturerInfineon Technologies
DescriptionDIODE GEN PURP 1.2KV 50A WAFER
DatasheetsDownload IRD3CH31DB6 Datasheet PDFPDF Icon
Price for IRD3CH31DB6

Specification of IRD3CH31DB6

Status
Obsolete
Package
Bulk
Supplier
Infineon Technologies
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
50A
Voltage - Forward (Vf) (Max) @ If
2.7 V @ 50 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
240 ns
Current - Reverse Leakage @ Vr
20 A @ 1200 V
Capacitance @ Vr, F
-
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Wafer
Operating Temperature - Junction
-40C ~ 150C

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