IRF100P218XKMA1

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Overview of IRF100P218XKMA1

Part NumberIRF100P218XKMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 100V 209A TO247AC
DatasheetsDownload IRF100P218XKMA1 Datasheet PDFPDF Icon
Price for IRF100P218XKMA1

Specification of IRF100P218XKMA1

Status
Obsolete
Series
StrongIRFET™
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
209A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.28mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 278A
Gate Charge (Qg) (Max) @ Vgs
555 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
25000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
556W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3

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