IRF1902TRPBF

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Overview of IRF1902TRPBF

Part NumberIRF1902TRPBF
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 20V 4.2A 8SO
DatasheetsDownload IRF1902TRPBF Datasheet PDFPDF Icon
Price for IRF1902TRPBF

Specification of IRF1902TRPBF

Status
Obsolete
Series
HEXFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Rds On (Max) @ Id, Vgs
85mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250A
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 4.5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
310 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)

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