IRF2907ZLPBF

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Overview of IRF2907ZLPBF

Part NumberIRF2907ZLPBF
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 75V 160A TO262
DatasheetsDownload IRF2907ZLPBF Datasheet PDFPDF Icon
Price for IRF2907ZLPBF

Specification of IRF2907ZLPBF

Status
Obsolete
Series
HEXFET®
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25C
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
270 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
7500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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