IRF3708PBF

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Overview of IRF3708PBF

Part NumberIRF3708PBF
ManufacturerInternational Rectifier
DescriptionHEXFET SMPS POWER MOSFET
DatasheetsDownload IRF3708PBF Datasheet PDFPDF Icon
Price for IRF3708PBF

Specification of IRF3708PBF

Status
Active
Series
HEXFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.8V, 10V
Rds On (Max) @ Id, Vgs
12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 4.5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
2417 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
87W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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