IRF3711L

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Overview of IRF3711L

Part NumberIRF3711L
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 20V 110A TO262
DatasheetsDownload IRF3711L Datasheet PDFPDF Icon
Price for IRF3711L

Specification of IRF3711L

Status
Obsolete
Series
HEXFET®
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 4.5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2980 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 120W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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