IRF520S

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Overview of IRF520S

Part NumberIRF520S
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 100V 9.2A D2PAK
DatasheetsDownload IRF520S Datasheet PDFPDF Icon
Price for IRF520S

Specification of IRF520S

Status
Obsolete
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
270mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
360 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 60W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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