IRF6100PBF

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Overview of IRF6100PBF

Part NumberIRF6100PBF
ManufacturerInfineon Technologies
DescriptionMOSFET P-CH 20V 5.1A 4FLIPFET
DatasheetsDownload IRF6100PBF Datasheet PDFPDF Icon
Price for IRF6100PBF

Specification of IRF6100PBF

Status
Obsolete
Series
HEXFET®
Package
Tape & Reel (TR)
Supplier
Infineon Technologies
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
65mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
1230 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-FlipFet
Package / Case
4-FlipFet

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