IRF6714MTR1PBF

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Overview of IRF6714MTR1PBF

Part NumberIRF6714MTR1PBF
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 25V 29A DIRECTFET
DatasheetsDownload IRF6714MTR1PBF Datasheet PDFPDF Icon
Price for IRF6714MTR1PBF

Specification of IRF6714MTR1PBF

Status
Obsolete
Series
HEXFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25C
29A (Ta), 166A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.1mOhm @ 29A, 10V
Vgs(th) (Max) @ Id
2.4V @ 100A
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 4.5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3890 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET MX
Package / Case
DirectFET Isometric MX

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