IRF7401PBF

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of IRF7401PBF

Part NumberIRF7401PBF
ManufacturerInternational Rectifier
DescriptionHEXFET POWER MOSFET
DatasheetsDownload IRF7401PBF Datasheet PDFPDF Icon
Price for IRF7401PBF

Specification of IRF7401PBF

Status
Active
Series
HEXFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
8.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Rds On (Max) @ Id, Vgs
22mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250A (Min)
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 4.5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)

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