IRF7465PBF

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of IRF7465PBF

Part NumberIRF7465PBF
ManufacturerInternational Rectifier
DescriptionSMPS HEXFET POWER MOSFET
DatasheetsDownload IRF7465PBF Datasheet PDFPDF Icon
Price for IRF7465PBF

Specification of IRF7465PBF

Status
Active
Series
HEXFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25C
1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
280mOhm @ 1.14A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)

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