IRF7799L2TR1PBF

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Overview of IRF7799L2TR1PBF

Part NumberIRF7799L2TR1PBF
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 250V 375A DIRECTFET
DatasheetsDownload IRF7799L2TR1PBF Datasheet PDFPDF Icon
Price for IRF7799L2TR1PBF

Specification of IRF7799L2TR1PBF

Status
Obsolete
Series
HEXFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
285mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
25V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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