IRF7832PBF

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Overview of IRF7832PBF

Part NumberIRF7832PBF
ManufacturerInternational Rectifier
DescriptionHEXFET POWER MOSFET
DatasheetsDownload IRF7832PBF Datasheet PDFPDF Icon
Price for IRF7832PBF

Specification of IRF7832PBF

Status
Active
Series
HEXFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.32V @ 250A
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 4.5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4310 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55C ~ 155C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)

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