IRF8113TRPBF-1

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Overview of IRF8113TRPBF-1

Part NumberIRF8113TRPBF-1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 30V 17.2A 8SO
DatasheetsDownload IRF8113TRPBF-1 Datasheet PDFPDF Icon
Price for IRF8113TRPBF-1

Specification of IRF8113TRPBF-1

Status
Obsolete
Series
HEXFET®
Package
Tape & Reel (TR)
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
17.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.6mOhm @ 17.2A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 4.5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2910 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)

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