IRF8313PBF

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Overview of IRF8313PBF

Part NumberIRF8313PBF
ManufacturerInternational Rectifier
DescriptionHEXFET POWER MOSFET
DatasheetsDownload IRF8313PBF Datasheet PDFPDF Icon
Price for IRF8313PBF

Specification of IRF8313PBF

Status
Obsolete
Series
HEXFET®
Package
Tube
Supplier
Rochester Electronics, LLC
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
9.7A (Ta)
Rds On (Max) @ Id, Vgs
15.5mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25A
Gate Charge (Qg) (Max) @ Vgs
9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
760pF @ 15V
Power - Max
2W (Ta)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO

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